| PART |
Description |
Maker |
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| AT-32032 AT-32032-TR2 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323
Microcurrent transistors for battery operations
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BUD42D11 BUD42DT4G |
High Speed, High Gain Bipolar NPN Transistor
|
ON Semiconductor
|
| MJW16212-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTOR
|
ON Semiconductor
|
| 2STC4467 |
High power NPN epitaxial planar bipolar transistor
|
STMicroelectronics
|
| 2STC59480807 |
High power NPN epitaxial planar bipolar transistor
|
STMicroelectronics
|
| 2STC5242 |
High power NPN epitaxial planar bipolar transistor
|
ST Microelectronics
STMicroelectronics
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
